Datasheet C2M1000170D (Wolfspeed) - 2
| 制造商 | Wolfspeed |
| 描述 | Silicon Carbide Power MOSFET 1700 V 5.0 A 1.0 Ω |
| 页数 / 页 | 10 / 2 — Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test … |
| 文件格式/大小 | PDF / 996 Kb |
| 文件语言 | 英语 |
Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test Conditions. Note. Reverse Diode Characteristics
该数据表的模型线
文件文字版本
Electrical Characteristics
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA 2.0 2.8 4 V VDS = VGS, ID = 0.5 mA V Fig. 11 GS(th) Gate Threshold Voltage 2.4 V VDS = VGS, ID = 0.5 mA, TJ = 150 °C IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1.7 kV, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 0.80 1.4 VGS = 20 V, ID = 2 A RDS(on) Drain-Source On-State Resistance Ω Fig. 4,5,6 1.4 VGS = 20 V, ID = 2 A, TJ = 150 °C 1.04 VDS= 20 V, IDS= 2 A g Fig. 7 fs Transconductance S 1.09 VDS= 20 V, IDS= 2 A, TJ = 150 °C Ciss Input Capacitance 215 VGS = 0 V Coss Output Capacitance 19 pF V Fig. 17,18 DS = 1000 V Crss Reverse Transfer Capacitance 2.2 f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 10.2 μJ Fig 16 EON Turn-On Switching Energy 89 VDS = 1.2 kV, VGS = -5/20 V μJ I = 2 A, R = 2.5 Ω, Fig. 26 D G(ext) EOFF Turn Off Switching Energy 14 L= 1478 μH, TJ = 150 °C td(on) Turn-On Delay Time 5 VDD = 1.2 kV, VGS = -5/20 V tr Rise Time 19 I = 600 Ω ns D = 2 A, RG(ext) = 2.5 Ω, RL Fig. 27 Timing relative to V t DS d(off) Turn-Off Delay Time 14 Per IEC60747-8-4 pg 83 tf Fall Time 63 RG(int) Internal Gate Resistance 24.8 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 4 VDS = 1.2 kV, VGS = -5/20 V Qgd Gate to Drain Charge 12 nC ID = 2 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 22
Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
3.8 V V = - 5 V, I = 1 A, T = 25 °C V GS SD J Fig. 8, 9, SD Diode Forward Voltage 10 3.3 V V = - 5 V, I = 1 A, T = 150 °C GS SD J IS Continuous Diode Forward Current 4 A T = 25 °C Note 1 C t Reverse Recovery Time 30 ns V = - 5 V, I = 2 A T = 150 °C rr GS SD J V = 1.2 kV R Q Reverse Recovery Charge 31 nC Note 1 rr dif/dt = 1135 A/µs I Peak Reverse Recovery Current 3 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS
Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 1.7 1.8 °C/W Fig. 21 RθJA Thermal Resistance from Junction to Ambient 40
2
C2M1000170D Rev. 7, 02-2021
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA 2.0 2.8 4 V VDS = VGS, ID = 0.5 mA V Fig. 11 GS(th) Gate Threshold Voltage 2.4 V VDS = VGS, ID = 0.5 mA, TJ = 150 °C IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1.7 kV, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 0.80 1.4 VGS = 20 V, ID = 2 A RDS(on) Drain-Source On-State Resistance Ω Fig. 4,5,6 1.4 VGS = 20 V, ID = 2 A, TJ = 150 °C 1.04 VDS= 20 V, IDS= 2 A g Fig. 7 fs Transconductance S 1.09 VDS= 20 V, IDS= 2 A, TJ = 150 °C Ciss Input Capacitance 215 VGS = 0 V Coss Output Capacitance 19 pF V Fig. 17,18 DS = 1000 V Crss Reverse Transfer Capacitance 2.2 f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 10.2 μJ Fig 16 EON Turn-On Switching Energy 89 VDS = 1.2 kV, VGS = -5/20 V μJ I = 2 A, R = 2.5 Ω, Fig. 26 D G(ext) EOFF Turn Off Switching Energy 14 L= 1478 μH, TJ = 150 °C td(on) Turn-On Delay Time 5 VDD = 1.2 kV, VGS = -5/20 V tr Rise Time 19 I = 600 Ω ns D = 2 A, RG(ext) = 2.5 Ω, RL Fig. 27 Timing relative to V t DS d(off) Turn-Off Delay Time 14 Per IEC60747-8-4 pg 83 tf Fall Time 63 RG(int) Internal Gate Resistance 24.8 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 4 VDS = 1.2 kV, VGS = -5/20 V Qgd Gate to Drain Charge 12 nC ID = 2 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 22
Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
3.8 V V = - 5 V, I = 1 A, T = 25 °C V GS SD J Fig. 8, 9, SD Diode Forward Voltage 10 3.3 V V = - 5 V, I = 1 A, T = 150 °C GS SD J IS Continuous Diode Forward Current 4 A T = 25 °C Note 1 C t Reverse Recovery Time 30 ns V = - 5 V, I = 2 A T = 150 °C rr GS SD J V = 1.2 kV R Q Reverse Recovery Charge 31 nC Note 1 rr dif/dt = 1135 A/µs I Peak Reverse Recovery Current 3 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS
Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 1.7 1.8 °C/W Fig. 21 RθJA Thermal Resistance from Junction to Ambient 40
2
C2M1000170D Rev. 7, 02-2021