Datasheet C2M1000170D (Wolfspeed) - 4
| 制造商 | Wolfspeed |
| 描述 | Silicon Carbide Power MOSFET 1700 V 5.0 A 1.0 Ω |
| 页数 / 页 | 10 / 4 — Typical Performance. Conditions:. DS = 20 V. tp < 200 µs. GS = -5 V. … |
| 文件格式/大小 | PDF / 996 Kb |
| 文件语言 | 英语 |
Typical Performance. Conditions:. DS = 20 V. tp < 200 µs. GS = -5 V. VGS = 0 V. (A). TJ = 150 °C. t, I DS. TJ = 25 °C. GS = -2 V. e Curren
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Typical Performance 5 -6 -5 -4 -3 -2 -1 0 Conditions: V 0 DS = 20 V tp < 200 µs V 4 GS = -5 V VGS = 0 V (A) TJ = 150 °C -1 (A) t, I DS t, I DS V 3 TJ = 25 °C GS = -2 V -2 e Curren TJ = -55 °C e Curren 2 -3 in-Sourc in-Sourc Dra -4 1 Dra Conditions: -5 0 Tj = -55°C 0 2 4 6 8 10 12 14 16 tp < 200 µs -6 Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)
Figure 7. Transfer Characteristic for Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 0 VGS = -5 V V V GS = 0 V GS = -5 V V -1 GS = 0 V (A) -1 (A) t, I DS VGS = -2 V t, I DS VGS = -2 V -2 -2 e Curren e Curren -3 -3 in-Sourc in-Sourc -4 Dra -4 Dra -5 Conditions: -5 Conditions: Tj = 25°C Tj = 150°C tp < 200 µs tp < 200 µs -6 -6 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
3.5 25 Conditons Conditions: V I 2 A 3.0 GS = VDS DS = IDS = 0.5 mA 20 IGS = 50 mA VDS = 1200 V T 2.5 J = 25 °C (V) (V) 15 2.0 V GS 10 1.5 e Voltage, ld Voltage, V th 5 1.0 e-Sourc Thresho 0.5 Gat 0 0.0 -5 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
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C2M1000170D Rev. 7, 02-2021
Figure 7. Transfer Characteristic for Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 0 VGS = -5 V V V GS = 0 V GS = -5 V V -1 GS = 0 V (A) -1 (A) t, I DS VGS = -2 V t, I DS VGS = -2 V -2 -2 e Curren e Curren -3 -3 in-Sourc in-Sourc -4 Dra -4 Dra -5 Conditions: -5 Conditions: Tj = 25°C Tj = 150°C tp < 200 µs tp < 200 µs -6 -6 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
3.5 25 Conditons Conditions: V I 2 A 3.0 GS = VDS DS = IDS = 0.5 mA 20 IGS = 50 mA VDS = 1200 V T 2.5 J = 25 °C (V) (V) 15 2.0 V GS 10 1.5 e Voltage, ld Voltage, V th 5 1.0 e-Sourc Thresho 0.5 Gat 0 0.0 -5 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
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C2M1000170D Rev. 7, 02-2021