Datasheet HMC930A (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz |
| 页数 / 页 | 16 / 5 — Data Sheet. HMC930A. ABSOLUTE MAXIMUM RATINGS Table 5. Parameter. Rating. … |
| 文件格式/大小 | PDF / 270 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC930A. ABSOLUTE MAXIMUM RATINGS Table 5. Parameter. Rating. ESD CAUTION
该数据表的模型线
文件文字版本
Data Sheet HMC930A ABSOLUTE MAXIMUM RATINGS Table 5.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (VDD) 13 V stress rating only; functional operation of the product at these Gate Bias Voltage or any other conditions above those indicated in the VGG1 −3 V to 0 V dc operational section of this specification is not implied. VGG2 Operation beyond the maximum operating conditions for VDD = 12 V VGG2 = 5.5 V, IDD >145 mA extended periods may affect product reliability. VDD = 8.5 V to 11 V VGG2 = (VDD − 6.5 V) up to 4.5 V V
ESD CAUTION
DD < 8.5 V VGG2 must remain > 2 V RF Input Power (RFIN) 22 dBm Channel Temperature 175°C Continuous Power Dissipation, PDISS 2.89 W (TA = 85°C, Derate 32.1 mW/°C Above 85°C) Thermal Resistance 31.1°C/W (Channel to Die Bottom) Output Power into Voltage Standing 24 dBm Wave Ratio (VSWR) > 7:1 Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model Class 1A, passed 250 V (HBM) Rev. A | Page 5 of 16 Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 12 GHz Frequency Range 12 GHz to 32 GHz Frequency Range 32 GHz to 40 GHz Frequency Range Total Supply Current by VDD Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Die Packaging Information Ordering Guide
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (VDD) 13 V stress rating only; functional operation of the product at these Gate Bias Voltage or any other conditions above those indicated in the VGG1 −3 V to 0 V dc operational section of this specification is not implied. VGG2 Operation beyond the maximum operating conditions for VDD = 12 V VGG2 = 5.5 V, IDD >145 mA extended periods may affect product reliability. VDD = 8.5 V to 11 V VGG2 = (VDD − 6.5 V) up to 4.5 V V
ESD CAUTION
DD < 8.5 V VGG2 must remain > 2 V RF Input Power (RFIN) 22 dBm Channel Temperature 175°C Continuous Power Dissipation, PDISS 2.89 W (TA = 85°C, Derate 32.1 mW/°C Above 85°C) Thermal Resistance 31.1°C/W (Channel to Die Bottom) Output Power into Voltage Standing 24 dBm Wave Ratio (VSWR) > 7:1 Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model Class 1A, passed 250 V (HBM) Rev. A | Page 5 of 16 Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 12 GHz Frequency Range 12 GHz to 32 GHz Frequency Range 32 GHz to 40 GHz Frequency Range Total Supply Current by VDD Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Die Packaging Information Ordering Guide