Datasheet NVH4L015N065SC1 (ON Semiconductor) - 6

制造商ON Semiconductor
描述MOSFET -SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A
页数 / 页8 / 6 — NVH4L015N065SC1. TYPICAL CHARACTERISTICS. Figure 13. Junction−to−Case …
修订版2
文件格式/大小PDF / 372 Kb
文件语言英语

NVH4L015N065SC1. TYPICAL CHARACTERISTICS. Figure 13. Junction−to−Case Thermal Response. www.onsemi.com

NVH4L015N065SC1 TYPICAL CHARACTERISTICS Figure 13 Junction−to−Case Thermal Response www.onsemi.com

该数据表的模型线

文件文字版本

NVH4L015N065SC1 TYPICAL CHARACTERISTICS
1 °C/W) 0.5 Duty Cycle 0.1 0.2 ANCE ( 0.1 0.05 0.02 0.01
P
0.01
DM
Notes: (t). EFFECTIVE TRANSIENT Single Pulse R
t
JC = 0.3°C/W
1
Duty Cycle, D = t Z JC THERMAL RESIST 1/t2
t2
0.001 0.00001 0.0001 0.001 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Thermal Response www.onsemi.com 6