Datasheet ON Semiconductor NVH4L015N065SC1 — 数据表

MOSFET -SiC Power, Single
N-Channel, TO247-4L
650 V, 12 mW, 142 A NVH4L015N065SC1
Features • Typ. RDS(on) = 12 m @ VGS = 18 V
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• www.onsemi.com Typ. RDS(on) = 15 m @ VGS = 15 V
Ultra Low Gate Charge (QG(tot) = 283 nC)
High Speed Switching with Low Capacitance (Coss = 430 pF)
100% Avalanche Tested
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 650 V 18 m @ 18 V 142 A D Typical Applications • Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
• Automotive Traction Inverter G
S1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values
of Gate−to−Source Voltage TC < 175°C VGSop −5/+18 V Steady
State TC = 25°C ID 142 A PD 500 W ID 100 A PD 250 W IDM 483 A IDSC 798 A TJ, Tstg −55 to
+175 °C Continuous Drain
Current (Note 1)
Power Dissipation …