Datasheet BYV28-50, BYV28-100, BYV28-150, BYV28-200 (Vishay)

制造商Vishay
描述Ultra-Fast Avalanche Sinterglass Diode
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BYV28-50, BYV28-100, BYV28-150, BYV28-200. Ultra-Fast Avalanche Sinterglass Diode. FEATURES. DESIGN SUPPORT TOOLS. APPLICATIONS

Datasheet BYV28-50, BYV28-100, BYV28-150, BYV28-200 Vishay

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BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode FEATURES
• Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package • AEC-Q101 qualified 949588 • Material categorization: for definitions of compliance please see
DESIGN SUPPORT TOOLS
click logo to get started www.vishay.com/doc?99912
APPLICATIONS
Models Available • Very fast rectification e.g. for switch mode power supply
MECHANICAL DATA
 
Case:
SOD-64 
Terminals:
plated axial leads, solderable per MIL-STD-750,  method 2026 
Polarity:
color band denotes cathode end  
Mounting position:
any 
Weight:
approx. 858 mg
ORDERING INFORMATION
(Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV28-200 BYV28-200-TR 2500 per 10" tape and reel 12 500 BYV28-200 BYV28-200-TAP 2500 per ammopack 12 500
PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE
BYV28-50 VR = 50 V; IF(AV) = 3.5 A SOD-64 BYV28-100 VR = 100 V; IF(AV) = 3.5 A SOD-64 BYV28-150 VR = 150 V; IF(AV) = 3.5 A SOD-64 BYV28-200 VR = 200 V; IF(AV) = 3.5 A SOD-64
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
BYV28-50 VR = VRRM 50 V Reverse voltage = repetitive peak reverse BYV28-100 VR = VRRM 100 V See electrical characteristics voltage BYV28-150 VR = VRRM 150 V BYV28-200 VR = VRRM 200 V BYV28-50 VRSM 55 V BYV28-100 VRSM 110 V Peak reverse voltage, non repetitive See electrical characteristics BYV28-150 VRSM 165 V BYV28-200 VRSM 220 V Peak forward surge current tp = 10 ms, half sine wave IFSM 90 A Repetitive peak forward current IFRM 25 A Average forward current IF(AV) 3.5 A Pulse energy in avalanche mode, non I repetitive (inductive load switch off) (BR)R = 1 A, Tj = 175 °C ER 20 mJ Junction and storage temperature range Tj = Tstg -55 to +175 °C Rev. 1.9. 21-Feb-18
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Document Number: 86044 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000