Datasheet T2035H-8G (STMicroelectronics) - 4

T2035H-8G Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state Figure 2. On-state RMS current versus case temperature RMS current
IT(RMS)(A) P(W) 25 25 α = 180° α = 180° 20 20 15 15 10 10 5 5 180° IT T 0 (RMS)(A) c(°C) 0 0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150
Figure 3. On-state RMS current versus ambient Figure 4. On-state characteristics (maximum values) temperature (free air convection)
ITM(A) IT(RMS)(A) 1000 5 Tj max. 4.5 S = 2 cm² and thickness = 35 µm CU α = 180° Vto = 0.8 V Rd = 19 mΩ 4 100 3.5 3 2.5 Tj = 150 °C 2 10 1.5 Tj = 25 °C 1 0.5 Ta(°C) VTM(V) 1 0 0 25 50 75 100 125 150 0 1 2 3 4 5
Figure 6. Recommended maximum case-to-ambient Figure 5. Relative variation of thermal impedance versus thermal resistance versus ambient temperature for pulse duration different peak off-state voltages
K = [Zth/Rth] Rth(c-a) (°C/W) (for heat sink sizing to avoid thermal runaway) 1.0E+00 70 VDRM = VRRM = 200 V VDRM = VRRM = 400 V Z 60 th(j-c) 1.0E-01 50 Zth(j-a) VDRM = VRRM = 600 V 40 1.0E-02 30 VDRM = VRRM = 800 V 20 tp(s) 10 1.0E-03 Ta (°C) 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 1E+04 0 20 40 60 80 100 120 140
DS13157
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Rev 3 page 4/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history