Datasheet T2035H-8G (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | 20 A - 800 V - 150°C H-series Triac in D²PAK |
| 页数 / 页 | 12 / 3 — T2035H-8G. Characteristics. Table 3. Static characteristics. Symbol. Test … |
| 文件格式/大小 | PDF / 275 Kb |
| 文件语言 | 英语 |
T2035H-8G. Characteristics. Table 3. Static characteristics. Symbol. Test conditions. Value. Unit. Table 4. Thermal resistance
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T2035H-8G Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 28 A, tp = 380 µs 25 °C Max. 1.55 V VTO (1) Threshold voltage 150 °C Max. 0.8 V R (1) D Dynamic resistance 150 °C Max. 19 mΩ 25 °C 2 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150 °C 6.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 2.8 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 1.0 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm2) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 µm copper thickness on FR4 PCB.
DS13157
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Rev 3 page 3/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history
T2035H-8G Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 28 A, tp = 380 µs 25 °C Max. 1.55 V VTO (1) Threshold voltage 150 °C Max. 0.8 V R (1) D Dynamic resistance 150 °C Max. 19 mΩ 25 °C 2 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150 °C 6.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 2.8 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 1.0 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm2) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 µm copper thickness on FR4 PCB.
DS13157
-
Rev 3 page 3/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history