Datasheet AUIRL7732S2TR (Infineon) - 2
| 制造商 | Infineon |
| 描述 | Automotive Grade. Automotive DirectFET Power MOSFET |
| 页数 / 页 | 11 / 2 — Thermal Resistance. Symbol Parameter. Typ. Max. Units. Static Electrical … |
| 文件格式/大小 | PDF / 437 Kb |
| 文件语言 | 英语 |
Thermal Resistance. Symbol Parameter. Typ. Max. Units. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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AUIRL7732S2TR
Thermal Resistance Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient ––– 67 RJA Junction-to-Ambient 12.5 ––– RJA Junction-to-Ambient 20 ––– °C/W RJ-Can Junction-to-Can ––– 3.7 RJ-PCB Junction-to-PCB Mounted 1.0 ––– Linear Derating Factor 0.27 W/°C
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1.0mA ––– 5.0 6.6 VGS = 10V, ID = 35A RDS(on) Static Drain-to-Source On-Resistance m ––– 7.5 10.5 VGS = 4.5V, ID = 29A VGS(th) Gate Threshold Voltage 1.0 1.8 2.5 V VDS = VGS, ID = 50µA VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -7.1 ––– mV/°C gfs Forward Transconductance 64 ––– ––– S VDS = 10V, ID = 35A RG Internal Gate Resistance ––– 0.64 ––– ––– ––– 5.0 VDS = 40V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 22 33 VDS = 20V Qgs1 Gate-to-Source Charge ––– 3.3 ––– VGS = 4.5V Qgs2 Gate-to-Source Charge ––– 2.8 ––– ID = 35A nC Qgd Gate-to-Drain ("Miller") Charge ––– 13 ––– See Fig. 11 Qgodr Gate Charge Overdrive ––– 2.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 15.8 ––– Qoss Output Charge ––– 13 ––– nC VDS = 16V, VGS = 0V td(on) Turn-On Delay Time ––– 21 ––– VDD = 20V tr Rise Time ––– 123 ––– ID = 35A ns td(off) Turn-Off Delay Time ––– 22 ––– RG = 6.8 tf Fall Time ––– 37 ––– VGS = 4.5V Ciss Input Capacitance ––– 2020 ––– VGS = 0V Coss Output Capacitance ––– 410 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0 MHz pF Coss Output Capacitance ––– 1460 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz Coss Output Capacitance ––– 365 ––– VGS = 0V, VDS = 32V, ƒ = 1.0 MHz Coss Output Capacitance ––– 630 ––– VGS = 0V, VDS = 0 to 32V Notes through are on page 3 2 2015-12-11
Thermal Resistance Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient ––– 67 RJA Junction-to-Ambient 12.5 ––– RJA Junction-to-Ambient 20 ––– °C/W RJ-Can Junction-to-Can ––– 3.7 RJ-PCB Junction-to-PCB Mounted 1.0 ––– Linear Derating Factor 0.27 W/°C
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1.0mA ––– 5.0 6.6 VGS = 10V, ID = 35A RDS(on) Static Drain-to-Source On-Resistance m ––– 7.5 10.5 VGS = 4.5V, ID = 29A VGS(th) Gate Threshold Voltage 1.0 1.8 2.5 V VDS = VGS, ID = 50µA VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -7.1 ––– mV/°C gfs Forward Transconductance 64 ––– ––– S VDS = 10V, ID = 35A RG Internal Gate Resistance ––– 0.64 ––– ––– ––– 5.0 VDS = 40V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 22 33 VDS = 20V Qgs1 Gate-to-Source Charge ––– 3.3 ––– VGS = 4.5V Qgs2 Gate-to-Source Charge ––– 2.8 ––– ID = 35A nC Qgd Gate-to-Drain ("Miller") Charge ––– 13 ––– See Fig. 11 Qgodr Gate Charge Overdrive ––– 2.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 15.8 ––– Qoss Output Charge ––– 13 ––– nC VDS = 16V, VGS = 0V td(on) Turn-On Delay Time ––– 21 ––– VDD = 20V tr Rise Time ––– 123 ––– ID = 35A ns td(off) Turn-Off Delay Time ––– 22 ––– RG = 6.8 tf Fall Time ––– 37 ––– VGS = 4.5V Ciss Input Capacitance ––– 2020 ––– VGS = 0V Coss Output Capacitance ––– 410 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0 MHz pF Coss Output Capacitance ––– 1460 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz Coss Output Capacitance ––– 365 ––– VGS = 0V, VDS = 32V, ƒ = 1.0 MHz Coss Output Capacitance ––– 630 ––– VGS = 0V, VDS = 0 to 32V Notes through are on page 3 2 2015-12-11