Datasheet IRG4PH40UD2-EP (Infineon) - 8
| 制造商 | Infineon |
| 描述 | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| 页数 / 页 | 11 / 8 — Same type. device as. D.U.T. 430µF. 80%. of Vce. Fig. 18a. Fig. 18b. Fig. … |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 242 Kb |
| 文件语言 | 英语 |
Same type. device as. D.U.T. 430µF. 80%. of Vce. Fig. 18a. Fig. 18b. Fig. 18c. Fig. 18d
该数据表的模型线
文件文字版本
IRG4PH40UD2-EP 90% Vge
Same type
+Vge
device as D.U.T.
Vce
430µF
90% Ic
80%
10% Vce
of Vce
Ic
D.U.T.
Ic 5% Ic td(off) tf t1+5µS Eoff = Vce ic Vce dt ∫ Ic dt
Fig. 18a
- Test Circuit for Measurement of t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2
Fig. 18b
- Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. trr Qrr = ∫ id dt Ic dt Ic tx 10% +Vg +Vg tx 10% Irr 10% Vcc Vcc DUT VOLTAGE Vce AND CURRENT Vpk Irr 10% Ic Vcc Ipk 90% Ic Ic DIODE RECOVERY WAVEFORMS 5% Vce td(on) tr E ∫ t2 on = Vce ie dt Vce Ic dt t4 t1 Erec ∫ = Vd id dt Vd Ic dt t3 t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4
Fig. 18c
- Test Waveforms for Circuit of Fig. 18a,
Fig. 18d
- Test Waveforms for Circuit of Fig. 18a, Defining E Defining E on, td(on), tr rec, trr, Qrr, Irr 8 www.irf.com
Same type
+Vge
device as D.U.T.
Vce
430µF
90% Ic
80%
10% Vce
of Vce
Ic
D.U.T.
Ic 5% Ic td(off) tf t1+5µS Eoff = Vce ic Vce dt ∫ Ic dt
Fig. 18a
- Test Circuit for Measurement of t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2
Fig. 18b
- Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. trr Qrr = ∫ id dt Ic dt Ic tx 10% +Vg +Vg tx 10% Irr 10% Vcc Vcc DUT VOLTAGE Vce AND CURRENT Vpk Irr 10% Ic Vcc Ipk 90% Ic Ic DIODE RECOVERY WAVEFORMS 5% Vce td(on) tr E ∫ t2 on = Vce ie dt Vce Ic dt t4 t1 Erec ∫ = Vd id dt Vd Ic dt t3 t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4
Fig. 18c
- Test Waveforms for Circuit of Fig. 18a,
Fig. 18d
- Test Waveforms for Circuit of Fig. 18a, Defining E Defining E on, td(on), tr rec, trr, Qrr, Irr 8 www.irf.com