Datasheet Infineon IRG4PH40UD2-E — 数据表

PD -95239 IRG4PH40UD2-EP
UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating
frequencies up to 200kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast
ultra-soft-recovery anti-parallel diode for use in
resonant circuits
• Industry standard TO-247AD package with
extended leads
• Lead-Free Benefits VCES = 1200V
VCE(on) typ. = 2.43V G @VGE = 15V, IC = 21A E n-channel • Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less / no snubbing Applications • Induction cooking systems
• Microwave Ovens
• Resonant Circuits TO-247AD Absolute Maximum Ratings
Parameter VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM …