Datasheet STK984-090A-E (ON Semiconductor) - 10
| 制造商 | ON Semiconductor |
| 描述 | 20A/40V Integrated Power Module in SIP23 package |
| 页数 / 页 | 19 / 10 — STK984-090A-E |
| 修订版 | 2 |
| 文件格式/大小 | PDF / 687 Kb |
| 文件语言 | 英语 |
STK984-090A-E
该数据表的模型线
文件文字版本
STK984-090A-E
Gate Driver Voltage: High-side and low-side The high-side MOSFETs are driven with an internal charge pump. The gate voltage VG from the built-in charge pump
circuit is set at VG=VB1+12V. Figure 8: Gate drive voltage variation with battery voltage for high-side MOSFETs The gate drive voltage for the low-side MOSFETs follows the voltage on VB1. If VB1 exceeds 18.5V, the gate drive
voltage is limited to 17V. Figure 9: Gate drive voltage versus battery voltage for low-side MOSFETs www.onsemi.com 10
Gate Driver Voltage: High-side and low-side The high-side MOSFETs are driven with an internal charge pump. The gate voltage VG from the built-in charge pump
circuit is set at VG=VB1+12V. Figure 8: Gate drive voltage variation with battery voltage for high-side MOSFETs The gate drive voltage for the low-side MOSFETs follows the voltage on VB1. If VB1 exceeds 18.5V, the gate drive
voltage is limited to 17V. Figure 9: Gate drive voltage versus battery voltage for low-side MOSFETs www.onsemi.com 10