Datasheet J174, J175, J176, J177 (Philips) - 4

制造商Philips
描述P-channel silicon field-effect transistors
页数 / 页6 / 4 — DYNAMIC CHARACTERISTICS. J174. J175. J176 J177
文件格式/大小PDF / 32 Kb
文件语言英语

DYNAMIC CHARACTERISTICS. J174. J175. J176 J177

DYNAMIC CHARACTERISTICS J174 J175 J176 J177

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Philips Semiconductors Product specification J174; J175; P-channel silicon field-effect transistors J176; J177
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified Input capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Cis typ. 8 pF VGS = VDS = 0 Cis typ. 30 pF Feedback capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Crs typ. 4 pF Switching times (see Fig.2 + 3)
J174 J175 J176 J177
Delay time td typ. 2 5 15 20 ns Rise time tr typ. 5 10 20 25 ns Turn-on time ton typ. 7 15 35 45 ns Storage time ts typ. 5 10 15 20 ns Fall time tf typ. 10 20 20 25 ns Turn-off time typ. 15 30 35 45 ns toff Test conditions: −VDD 10 6 6 6 V VGS off 12 8 6 3 V RL 560 1200 2000 2900 Ω VGS on 0 0 0 0 V − V handbook, halfpage VDD GSoff 90% 50 Ω INPUT V 10% out RL 10% 10% Vin D.U.T OUTPUT 90% 90% 50 Ω tf tr t t MBK292 s d MBK293 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms; td + tr = ton ; ts + tf = toff. April 1995 4 Document Outline DESCRIPTION PINNING QUICK REFERENCE DATA RATINGS THERMAL RESISTANCE STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINE SOT54 DEFINITIONS