Datasheet J174, J175, J176, J177 (Philips) - 3
| 制造商 | Philips |
| 描述 | P-channel silicon field-effect transistors |
| 页数 / 页 | 6 / 3 — RATINGS. THERMAL RESISTANCE. STATIC CHARACTERISTICS. J174. J175. J176 J177 |
| 文件格式/大小 | PDF / 32 Kb |
| 文件语言 | 英语 |
RATINGS. THERMAL RESISTANCE. STATIC CHARACTERISTICS. J174. J175. J176 J177
该数据表的模型线
文件文字版本
Philips Semiconductors Product specification J174; J175; P-channel silicon field-effect transistors J176; J177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate-drain voltage VGDO max. 30 V Gate current (DC) −IG max. 50 mA Total power dissipation up to Tamb = 50 °C Ptot max. 400 mW Storage temperature range Tstg −65 to +150 °C Junction temperature Tj max. 150 °C
THERMAL RESISTANCE
From junction to ambient in free air Rth j-a = 250 K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
J174 J175 J176 J177
Gate cut-off current VGS = 20 V; VDS = 0 IGSS max. 1 1 1 1 nA Drain cut-off current −VDS = 15 V; VGS = 10 V −IDSX max. 1 1 1 1 nA Drain current min. 20 7 2 1.5 mA −VDS = 15 V; VGS = 10 V −IDSS max. 135 70 35 20 mA Gate-source breakdown voltage IG = 1 µA; VDS = 0 V(BR)GSS min. 30 30 30 30 V Gate-source cut-off voltage min. 5 3 1 0.8 V −ID = 10 nA; VDS = −15 V VGS off max. 10 6 4 2.25 V Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDSon max. 85 125 250 300 Ω April 1995 3 Document Outline DESCRIPTION PINNING QUICK REFERENCE DATA RATINGS THERMAL RESISTANCE STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINE SOT54 DEFINITIONS
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate-drain voltage VGDO max. 30 V Gate current (DC) −IG max. 50 mA Total power dissipation up to Tamb = 50 °C Ptot max. 400 mW Storage temperature range Tstg −65 to +150 °C Junction temperature Tj max. 150 °C
THERMAL RESISTANCE
From junction to ambient in free air Rth j-a = 250 K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
J174 J175 J176 J177
Gate cut-off current VGS = 20 V; VDS = 0 IGSS max. 1 1 1 1 nA Drain cut-off current −VDS = 15 V; VGS = 10 V −IDSX max. 1 1 1 1 nA Drain current min. 20 7 2 1.5 mA −VDS = 15 V; VGS = 10 V −IDSS max. 135 70 35 20 mA Gate-source breakdown voltage IG = 1 µA; VDS = 0 V(BR)GSS min. 30 30 30 30 V Gate-source cut-off voltage min. 5 3 1 0.8 V −ID = 10 nA; VDS = −15 V VGS off max. 10 6 4 2.25 V Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDSon max. 85 125 250 300 Ω April 1995 3 Document Outline DESCRIPTION PINNING QUICK REFERENCE DATA RATINGS THERMAL RESISTANCE STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINE SOT54 DEFINITIONS