Datasheet GAN063-650WSA (Nexperia) - 2

制造商Nexperia
描述650 V, 50 mΩ Gallium Nitride (GaN) FET
页数 / 页12 / 2 — Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 5. …
修订版27112019
文件格式/大小PDF / 289 Kb
文件语言英语

Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 5. Pinning information Table 2. Pinning information. Pin. Symbol

Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 5 Pinning information Table 2 Pinning information Pin Symbol

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Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 G gate mb D 2 S source 3 D drain mb S mounting base; connected to source G S 1 2 3
TO-247 (SOT429)
aaa-028116
6. Ordering information Table 3. Ordering information Type number Package Name Description Version
GAN063-650WSA TO-247 plastic, single-ended through-hole package; 3 leads; 5.45 mm SOT429 pitch; 20.45 mm x 15.6 mm x 4.95 mm body
7. Marking Table 4. Marking codes Type number Marking code
GAN063-650WSA GAN063-650WSA GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 2 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents