Datasheet GAN063-650WSA (Nexperia) - 4

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Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET
aaa-028052 103 ID (A ( ) A 102 tpt p= = 1 1 µ s µ 10 1 0 0 0 µ s 10 1 0 µ s 10 1 1 m s m 1 10 1 0 m s m 10-1 10-210-1 1 10 102 103 VDS (V) Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from Fig. 4 - - 1.05 K/W junction to mounting base Rth(j-a) thermal resistance from vertical in free air - - 40 K/W junction to ambient aaa-028054 10 Zt Z ht(j(-m - b) b (K/ K W) W 1 δ δ= =0 .5. 0. 0 2 10-1 0.01 t P p sing n l g e e sh s ot o δ = T 10-2 t tp T 10-310-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
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Product data sheet 27 November 2019 4 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents