Datasheet BC847BS (MCC) - 2
| 制造商 | MCC |
| 描述 | Dual NPN Small Signal Transistors |
| 页数 / 页 | 4 / 2 — BC847BS. Electrical Characteristics @ 25°C Unless Otherwise Specified. … |
| 文件格式/大小 | PDF / 742 Kb |
| 文件语言 | 英语 |
BC847BS. Electrical Characteristics @ 25°C Unless Otherwise Specified. Parameter. Symbol. Min. Typ. Max. Units. Conditions
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BC847BS Electrical Characteristics @ 25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions
Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA, IC=0 Collector-Base Cutoff Current ICBO 15 nA VCB=30V, IE=0 Emitter-Base Cutoff Current IEBO 100 nA VEB =5V, IC=0 DC Current Gain* hFE 200 450 VCE=5V, IC=2mA 0.25 V IC=10mA, IB=0.5mA Collector-Emitter Saturation Voltage VCE(sat) 0.65 V IC=100mA, IB=5mA 0.7 V IC=10mA, IB=0.5mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=100mA, IB=5mA Base-Emitter Voltage VBE 0.58 0.665 0.7 V VCE=5V, IC=2mA Transition Frequency fT 200 MHz VCE=5V, IC=10mA, f=100MHz Output Capacitance Cob 2 pF VCB=10V, IE=0, f=1MHz *Pluse Width ≤ 300µs, Duty Cycle ≤ 2.0% Rev.3-1-01012019 2/4 MCCSEMI.COM
Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA, IC=0 Collector-Base Cutoff Current ICBO 15 nA VCB=30V, IE=0 Emitter-Base Cutoff Current IEBO 100 nA VEB =5V, IC=0 DC Current Gain* hFE 200 450 VCE=5V, IC=2mA 0.25 V IC=10mA, IB=0.5mA Collector-Emitter Saturation Voltage VCE(sat) 0.65 V IC=100mA, IB=5mA 0.7 V IC=10mA, IB=0.5mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=100mA, IB=5mA Base-Emitter Voltage VBE 0.58 0.665 0.7 V VCE=5V, IC=2mA Transition Frequency fT 200 MHz VCE=5V, IC=10mA, f=100MHz Output Capacitance Cob 2 pF VCB=10V, IE=0, f=1MHz *Pluse Width ≤ 300µs, Duty Cycle ≤ 2.0% Rev.3-1-01012019 2/4 MCCSEMI.COM