Datasheet SM9233, SM9235, SM9236 (Silicon Microstructures) - 2
| 制造商 | Silicon Microstructures |
| 描述 | Ultra Low Gauge Pressure Digital Sensor (SM923X) |
| 页数 / 页 | 18 / 2 — SM9233/SM9235/SM9236 Series. www.si-micro.com. 1. Absolute Maximum … |
| 文件格式/大小 | PDF / 1.4 Mb |
| 文件语言 | 英语 |
SM9233/SM9235/SM9236 Series. www.si-micro.com. 1. Absolute Maximum Ratings. Notes:. 2. ESD. 3. External Components
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文件文字版本
SM9233/SM9235/SM9236 Series www.si-micro.com
27
1. Absolute Maximum Ratings
45 All parameters are specified at Vdd = 3.3 V supply voltage at 25oC, unless otherwise noted. 131 No. Characteristic Symbol Minimum Maximum Units 167 1 Supply Voltage VDD 3.0 5.5 V 170 2 Digital IO Voltage VIO,DIG -0.3 VDD+0.3 V 175 3 Max. Digital IO Current (DC) IIO,DIG -10 +10 mA 4 Storage Temperature(a,b) TSTG -40 +125 °C 169 0 5 Proof Pressure (a, c) PProof 7 (1.0) kPa (PSI) 61 6 Burst Pressure (a, d) PBurst 20 (2.9) kPa (PSI)
Notes:
a. Tested on a sample basis. b. Clean, dry air compatible with wetted materials. Wetted materials include silicon, glass, RTV (silicone), gold, aluminum, copper, nickel, palladium, epoxy, stainless steel and plastic (mold compound). c. Proof pressure is defined as the maximum pressure to which the device can be taken and still perform within specifications after returning to the operating pressure range. d. Burst pressure is the pressure at which the device suffers catastrophic failure resulting in pressure loss through the device.
2. ESD
No. Description Symbol Minimum Maximum Units 2.1 ESD HBM Protection at all Pins VESD(HBM) -2 2 kV
3. External Components
No. Description Symbol Min. Typ. Max. Units 1 Supply bypass capacitor* CVDD 100 nF 2 I2C Data and clock pull up resistors* RP 4.7 kOhm * Not tested in production
4. Calibrated Pressure Ranges Calibrated Pressure Ranges No. Device Type PMIN (Pa) PMAX (Pa)
1 SM9233 – 250 Gauge 0 +250 2 SM9235 –300 Gauge 0 +300 3 SM9236 –600 Gauge 0 +600 Silicon Microstructures, Inc. 2001-2019. All rights reserved +1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
DOC # 40DS9202.02
Page 2
27
1. Absolute Maximum Ratings
45 All parameters are specified at Vdd = 3.3 V supply voltage at 25oC, unless otherwise noted. 131 No. Characteristic Symbol Minimum Maximum Units 167 1 Supply Voltage VDD 3.0 5.5 V 170 2 Digital IO Voltage VIO,DIG -0.3 VDD+0.3 V 175 3 Max. Digital IO Current (DC) IIO,DIG -10 +10 mA 4 Storage Temperature(a,b) TSTG -40 +125 °C 169 0 5 Proof Pressure (a, c) PProof 7 (1.0) kPa (PSI) 61 6 Burst Pressure (a, d) PBurst 20 (2.9) kPa (PSI)
Notes:
a. Tested on a sample basis. b. Clean, dry air compatible with wetted materials. Wetted materials include silicon, glass, RTV (silicone), gold, aluminum, copper, nickel, palladium, epoxy, stainless steel and plastic (mold compound). c. Proof pressure is defined as the maximum pressure to which the device can be taken and still perform within specifications after returning to the operating pressure range. d. Burst pressure is the pressure at which the device suffers catastrophic failure resulting in pressure loss through the device.
2. ESD
No. Description Symbol Minimum Maximum Units 2.1 ESD HBM Protection at all Pins VESD(HBM) -2 2 kV
3. External Components
No. Description Symbol Min. Typ. Max. Units 1 Supply bypass capacitor* CVDD 100 nF 2 I2C Data and clock pull up resistors* RP 4.7 kOhm * Not tested in production
4. Calibrated Pressure Ranges Calibrated Pressure Ranges No. Device Type PMIN (Pa) PMAX (Pa)
1 SM9233 – 250 Gauge 0 +250 2 SM9235 –300 Gauge 0 +300 3 SM9236 –600 Gauge 0 +600 Silicon Microstructures, Inc. 2001-2019. All rights reserved +1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
DOC # 40DS9202.02
Page 2