Datasheet DGTD65T15H2TF (Diodes) - 4

制造商Diodes
描述650V Field Stop IGBT
页数 / 页9 / 4 — DGTD65T15H2TF. Electrical Characteristics. Parameter. Symbol. Min. Typ. …
文件格式/大小PDF / 1.8 Mb
文件语言英语

DGTD65T15H2TF. Electrical Characteristics. Parameter. Symbol. Min. Typ. Max. Unit. Condition. STATIC CHARACTERISTICS

DGTD65T15H2TF Electrical Characteristics Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS

该数据表的模型线

文件文字版本

DGTD65T15H2TF Electrical Characteristics
(@Tj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 — — V IC = 2mA, VGE = 0V T —

1.65

2.00

Collector-Emitter Saturation Voltage j = +25°C VCE(sat) V IC = 15A, VGE = 15V

Tj = +175°C — 1.90 — T —

1.85

2.30

Diode Forward Voltage j = +25°C VF V VGE = 0V, IF = 15A

Tj = +175°C — 1.95 — Gate-Emitter Threshold Voltage VGE(th) 4.5

5.5

6.5

V VCE = VGE, IC = 0.5mA





V I CE = 650V, VGE = 0V, CES 20

µA Zero Gate Voltage Collector Current Tj = +25°C

Gate-Emitter Leakage Current IGES — — ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge

Qg —

61

— Gate-Emitter Charge

Qge



11



nC

VCE = 520V, IC = 15A, VGE = 15V

Gate-Collector Charge Qgc —

35 —

Input Capacitance

Cies —

1129 —

V Reverse Transfer Capacitance

Cres — 57 — pF

CE = 25V, VGE = 0V, f = 1MHz

Output Capacitance Coes — 31 —
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(on) —

19 —

Rise Time tr —

27 —

ns VGE = 15V, VCC = 400V, Turn-Off Delay Time td(off) —

128 —

IC = 15A, RG = 10Ω, Fall Time tf —

32 —

Inductive Load, Turn-On Switching Energy Eon — 270 — Tj = +25°C Turn-Off Switching Energy

E µJ off — 86 — Total Switching Energy

Ets —

356 —

Turn-On Delay Time td(on) —

17 —

Rise Time tr —

29 —

ns VGE = 15V, VCC = 400V, Turn-Off Delay Time td(off) —

150 —

IC = 15A, RG = 10Ω, Fall Time tf — 130 — Inductive Load, Turn-On Switching Energy Eon — 342 — Tj = +175°C Turn-Off Switching Energy

Eoff —

288 —

µJ Total Switching Energy

Ets —

630 —

Reverse Recovery Time trr —

150 —

ns IF = 15A, diF/dt = 200A/µs, Reverse Recovery Current

Irr —

5.2 —

A Tj = +25°C Reverse Recovery Charge

Qrr — 390 — nC Reverse Recovery Time

trr — 207 — ns IF = 15A, diF/dt = 200A/µs, Reverse Recovery Current

Irr — 6.1 — A

Tj = +175°C Reverse Recovery Charge

Qrr — 631 — nC DGTD65T15H2TF 4 of 9 June 2018 Document Number DS39649 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features Description Mechanical Data Characteristic Symbol Value Unit Characteristic Applications Ordering Information (Note 4) Marking Information Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (continued) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (cont.) Package Outline Dimensions