Datasheet LTC4101 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Smart Battery Charger Controller |
| 页数 / 页 | 30 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifi cations which apply … |
| 文件格式/大小 | PDF / 261 Kb |
| 文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS. The. denotes the specifi cations which apply over the full operating
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LTC4101
ELECTRICAL CHARACTERISTICS The
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VDCIN = 20V, VDD = 3.3V, VBAT = 4V unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Current Sense Amplifi er, CA1
Input Bias Current into BAT Pin 11.66 μA CMSL CA1/I1 Input Common Mode Low l 0 V CMSH CA1/I1 Input Common Mode High VDCIN ≤ 28V l VCLN–0.2 V
Current Comparators IREV
ITREV Reverse Current Threshold (VCSP-VBAT) –30 mV
Current Sense Amplifi er, CA2
Transconductance 1 mmho Source Current Measured at ITH, VITH = 1.4V –40 μA Sink Current Measured at ITH, VITH = 1.4V 40 μA
Current Limit Amplifi er
Transconductance 1.5 mmho VCLP Current Limit Threshold l 93 100 107 mV ICLN CLN Input Bias Current 50 nA
Voltage Error Amplifi er, EA
Transconductance 1 mmho Sink Current Measured at ITH, VITH = 1.4V 36 μA OVSD Overvoltage Shutdown Threshold as a Percent l 102 107 110 % of Programmed Charger Voltage
Input P-Channel FET Driver (INFET)
DCIN Detection Threshold (VDCIN-VCLP) DCIN Voltage Ramping Up l 0 0.17 0.25 V from VCLP-0.05V Forward Regulation Voltage (VDCIN-VCLP) l 25 50 mV Reverse Voltage Turn-Off Voltage (VDCIN-VCLP) l –60 –25 mV INFET ON Clamping Voltage (VDCIN-VINFET) IINFET = 1μA l 5 5.8 6.5 V INFET OFF Clamping Voltage (VDCIN-VINFET) IINFET = –25μA 0.25 V
Oscillator
fOSC Regulator Switching Frequency 255 300 345 kHz fMIN Regulator Switching Frequency in Drop Out Duty Cycle ≥ 98% 20 25 kHz DCMAX Regulator Maximum Duty Cycle VCSP = VBAT 98 99 %
Gate Drivers (TGATE, BGATE)
VTGATE High (VCLP-VTGATE) ITGATE = –1mA 50 mV VBGATE High CLOAD = 3000pF 4.5 5.6 10 V VTGATE Low (VCLP-VTGATE) CLOAD = 3000pF 4.5 5.6 10 V VBGATE Low IBGATE = 1mA 50 mV TGATE Transition Time TGTR TGATE Rise Time CLOAD = 3000pF, 10% to 90% 50 110 ns TGTF TGATE Fall Time CLOAD = 3000pF, 10% to 90% 50 100 ns BGATE Transition Time BGTR BGATE Rise Time CLOAD = 3000pF, 10% to 90% 40 90 ns BGTF BGATE Fall Time CLOAD = 3000pF, 10% to 90% 40 80 ns VTGATE at Shutdown (VCLN-VTGATE) ITGATE = –1μA 100 mV 4101fa 3
ELECTRICAL CHARACTERISTICS The
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VDCIN = 20V, VDD = 3.3V, VBAT = 4V unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Current Sense Amplifi er, CA1
Input Bias Current into BAT Pin 11.66 μA CMSL CA1/I1 Input Common Mode Low l 0 V CMSH CA1/I1 Input Common Mode High VDCIN ≤ 28V l VCLN–0.2 V
Current Comparators IREV
ITREV Reverse Current Threshold (VCSP-VBAT) –30 mV
Current Sense Amplifi er, CA2
Transconductance 1 mmho Source Current Measured at ITH, VITH = 1.4V –40 μA Sink Current Measured at ITH, VITH = 1.4V 40 μA
Current Limit Amplifi er
Transconductance 1.5 mmho VCLP Current Limit Threshold l 93 100 107 mV ICLN CLN Input Bias Current 50 nA
Voltage Error Amplifi er, EA
Transconductance 1 mmho Sink Current Measured at ITH, VITH = 1.4V 36 μA OVSD Overvoltage Shutdown Threshold as a Percent l 102 107 110 % of Programmed Charger Voltage
Input P-Channel FET Driver (INFET)
DCIN Detection Threshold (VDCIN-VCLP) DCIN Voltage Ramping Up l 0 0.17 0.25 V from VCLP-0.05V Forward Regulation Voltage (VDCIN-VCLP) l 25 50 mV Reverse Voltage Turn-Off Voltage (VDCIN-VCLP) l –60 –25 mV INFET ON Clamping Voltage (VDCIN-VINFET) IINFET = 1μA l 5 5.8 6.5 V INFET OFF Clamping Voltage (VDCIN-VINFET) IINFET = –25μA 0.25 V
Oscillator
fOSC Regulator Switching Frequency 255 300 345 kHz fMIN Regulator Switching Frequency in Drop Out Duty Cycle ≥ 98% 20 25 kHz DCMAX Regulator Maximum Duty Cycle VCSP = VBAT 98 99 %
Gate Drivers (TGATE, BGATE)
VTGATE High (VCLP-VTGATE) ITGATE = –1mA 50 mV VBGATE High CLOAD = 3000pF 4.5 5.6 10 V VTGATE Low (VCLP-VTGATE) CLOAD = 3000pF 4.5 5.6 10 V VBGATE Low IBGATE = 1mA 50 mV TGATE Transition Time TGTR TGATE Rise Time CLOAD = 3000pF, 10% to 90% 50 110 ns TGTF TGATE Fall Time CLOAD = 3000pF, 10% to 90% 50 100 ns BGATE Transition Time BGTR BGATE Rise Time CLOAD = 3000pF, 10% to 90% 40 90 ns BGTF BGATE Fall Time CLOAD = 3000pF, 10% to 90% 40 80 ns VTGATE at Shutdown (VCLN-VTGATE) ITGATE = –1μA 100 mV 4101fa 3