Datasheet AD8599-EP (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Ultralow Distortion, Ultralow Noise Op Amp (Dual) |
| 页数 / 页 | 8 / 3 — Enhanced Product. AD8599-EP. SPECIFICATIONS. Table 1. Parameter. Symbol. … |
| 文件格式/大小 | PDF / 233 Kb |
| 文件语言 | 英语 |
Enhanced Product. AD8599-EP. SPECIFICATIONS. Table 1. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit
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Enhanced Product AD8599-EP SPECIFICATIONS
VSY = ±15 V, VCM = 0 V, VO = 0 V, TA = 25°C, unless otherwise specified.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 10 120 µV −55°C ≤ TA ≤ +125°C 300 µV Offset Voltage Drift ΔVOS/ΔT −55°C ≤ TA ≤ +125°C 0.8 2.5 µV/°C Input Bias Current IB 25 200 nA −55°C ≤ TA ≤ +125°C 350 nA Input Offset Current IOS 50 200 nA −55°C ≤ TA ≤ +125°C 350 nA Input Voltage Range IVR −12.5 +12.5 V Common-Mode Rejection Ratio CMRR −12.5 V ≤ VCM ≤ +12.5 V 120 135 dB −55°C ≤ TA ≤ +125°C 115 dB Large Signal Voltage Gain AVO RL ≥ 600 Ω, VO = −11 V to +11 V 110 116 dB −55°C ≤ TA ≤ +125°C 106 dB Input Capacitance Differential Capacitance CDIFF 12.1 pF Common-Mode Capacitance CCM 5.1 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 600 Ω 13.1 13.4 V −55°C ≤ TA ≤ +125°C 12.8 V RL = 2 kΩ 13.5 13.7 V −55°C ≤ TA ≤ +125°C 13.2 V Low VOL RL = 600 Ω −13.2 −12.9 V −55°C ≤ TA ≤ +125°C −12.8 V RL = 2 kΩ −13.5 −13.4 V −55°C ≤ TA ≤ +125°C −13.3 V Output Short-Circuit Current ISC ±52 mA Closed-Loop Output Impedance ZOUT At 1 MHz, AVO = 1 5 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±18 V to ±4.5 V 120 140 dB −55°C ≤ TA ≤ +125°C 118 dB Supply Current per Amplifier ISY 5.0 5.7 mA −55°C ≤ TA ≤ +125°C 6.75 mA DYNAMIC PERFORMANCE Slew Rate SR AVO = −1, RL = 2 kΩ 16 V/µs AVO = 1, RL = 2 kΩ 15 V/µs Settling Time tS To 0.01%, step = 10 V 2 µs Gain Bandwidth Product GBP 10 MHz Phase Margin ΦM 65 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 76 nV p-p Voltage Noise Density en f = 1 kHz 1.07 1.15 nV/√Hz f = 10 Hz 1.5 nV/√Hz Correlated Current Noise f = 1 kHz 1.9 pA/√Hz f = 10 Hz 4.3 pA/√Hz Uncorrelated Current Noise f = 1 kHz 2.3 pA/√Hz f = 10 Hz 5.3 pA/√Hz Total Harmonic Distortion + Noise THD + N G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 3 V −120 dB Channel Separation CS f = 10 kHz −120 dB Rev. 0 | Page 3 of 8 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER SEQUENCING ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE
VSY = ±15 V, VCM = 0 V, VO = 0 V, TA = 25°C, unless otherwise specified.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 10 120 µV −55°C ≤ TA ≤ +125°C 300 µV Offset Voltage Drift ΔVOS/ΔT −55°C ≤ TA ≤ +125°C 0.8 2.5 µV/°C Input Bias Current IB 25 200 nA −55°C ≤ TA ≤ +125°C 350 nA Input Offset Current IOS 50 200 nA −55°C ≤ TA ≤ +125°C 350 nA Input Voltage Range IVR −12.5 +12.5 V Common-Mode Rejection Ratio CMRR −12.5 V ≤ VCM ≤ +12.5 V 120 135 dB −55°C ≤ TA ≤ +125°C 115 dB Large Signal Voltage Gain AVO RL ≥ 600 Ω, VO = −11 V to +11 V 110 116 dB −55°C ≤ TA ≤ +125°C 106 dB Input Capacitance Differential Capacitance CDIFF 12.1 pF Common-Mode Capacitance CCM 5.1 pF OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 600 Ω 13.1 13.4 V −55°C ≤ TA ≤ +125°C 12.8 V RL = 2 kΩ 13.5 13.7 V −55°C ≤ TA ≤ +125°C 13.2 V Low VOL RL = 600 Ω −13.2 −12.9 V −55°C ≤ TA ≤ +125°C −12.8 V RL = 2 kΩ −13.5 −13.4 V −55°C ≤ TA ≤ +125°C −13.3 V Output Short-Circuit Current ISC ±52 mA Closed-Loop Output Impedance ZOUT At 1 MHz, AVO = 1 5 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = ±18 V to ±4.5 V 120 140 dB −55°C ≤ TA ≤ +125°C 118 dB Supply Current per Amplifier ISY 5.0 5.7 mA −55°C ≤ TA ≤ +125°C 6.75 mA DYNAMIC PERFORMANCE Slew Rate SR AVO = −1, RL = 2 kΩ 16 V/µs AVO = 1, RL = 2 kΩ 15 V/µs Settling Time tS To 0.01%, step = 10 V 2 µs Gain Bandwidth Product GBP 10 MHz Phase Margin ΦM 65 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 76 nV p-p Voltage Noise Density en f = 1 kHz 1.07 1.15 nV/√Hz f = 10 Hz 1.5 nV/√Hz Correlated Current Noise f = 1 kHz 1.9 pA/√Hz f = 10 Hz 4.3 pA/√Hz Uncorrelated Current Noise f = 1 kHz 2.3 pA/√Hz f = 10 Hz 5.3 pA/√Hz Total Harmonic Distortion + Noise THD + N G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 3 V −120 dB Channel Separation CS f = 10 kHz −120 dB Rev. 0 | Page 3 of 8 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER SEQUENCING ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE