Datasheet PUMD9 - NXP TRANSISTOR, DIGITAL, DUAL, SOT-363 — 数据表

NXP PUMD9

Part Number: PUMD9

详细说明

Manufacturer: NXP

Description: TRANSISTOR, DIGITAL, DUAL, SOT-363

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Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 50 V
  • Collector Emitter Voltage Vces: 100 mV
  • Continuous Collector Current Ic Max: 100 A
  • Current Ic Continuous a Max: 100 A
  • DC Collector Current: 100 mA
  • DC Current Gain Min: 100
  • DC Current Gain: 100
  • Full Power Rating Temperature: 25°C
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • Number of Transistors: 2
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-363
  • Power Dissipation Pd: 300 mW
  • Power Dissipation Ptot Max: 300 mW
  • Resistance R1 PNP: 10 kOhm
  • Resistance R1: 10 kOhm
  • Resistance R2: 47 kOhm
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-363
  • Transistor Polarity: NPN / PNP
  • Transistor Type: Bias Resistor (BRT)
  • Voltage Vcbo: 50 V

RoHS: Yes

Accessories:

  • Electrolube - SMA10SL
  • LICEFA - V11-7-6-10
  • LICEFA - V11-7