Datasheet SI4925BDY - Vishay MOSFET, DUAL, PP, SO-8 — 数据表

Vishay SI4925BDY

Part Number: SI4925BDY

详细说明

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, SO-8

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Docket:
Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)

Specifications:

  • Continuous Drain Current Id: 5.3 A
  • Current Id Max: -5.3 A
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 34 ns
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 25 MOhm
  • On State Resistance @ Vgs = 4.5V: 41 MOhm
  • On State resistance @ Vgs = 10V: 25 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • P Channel Gate Charge: 33nC
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.1 W
  • Pulse Current Idm: 40 A
  • Rds(on) Test Voltage Vgs: -10 V
  • Rise Time: 12 ns
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • Turn Off Time: 60 ns
  • Turn On Time: 9 ns
  • Voltage Vds Typ: -30 V
  • Voltage Vgs Max: -20 V
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes