Datasheet SI3861BDV-T1-GE3 - Vishay DUAL N/P CH MOSFET — 数据表

详细说明

Manufacturer: Vishay

Description: DUAL N/P CH MOSFET

Specifications:

• Continuous Drain Current Id: 2.3 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 145 MOhm
• Power Dissipation Pd: 830 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• Transistor Polarity: N and P Channel

RoHS: Yes

其他名称:

SI3861BDVT1GE3, SI3861BDV T1 GE3