Datasheet SIB911DK-T1-GE3 - Vishay MOSFET, DUAL, PP, PPAK SC-75 — 数据表

Vishay SIB911DK-T1-GE3

Part Number: SIB911DK-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, PPAK SC-75

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Docket:
New Product
SiB911DK
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 2.6 A
  • Current Id Max: -2.6 A
  • Drain Source Voltage Vds: -20 V
  • Junction Temperature Tj Max: 150°C
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • On Resistance Rds(on): 295 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SC-75
  • Power Dissipation: 3.1 W
  • Rds(on) Test Voltage Vgs: 8 V
  • Rise Time: 45 ns
  • SVHC: No SVHC (20-Jun-2011)
  • Threshold Voltage Vgs Typ: -1 V
  • Transistor Case Style: SC-75
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: -1 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: 1 V
  • Voltage Vgs th Min: 0.4 V

RoHS: Yes

其他名称:

SIB911DKT1GE3, SIB911DK T1 GE3