Datasheet SI1958DH-T1-E3 - Vishay MOSFET, DUAL, N, SC-70 — 数据表

Vishay SI1958DH-T1-E3

Part Number: SI1958DH-T1-E3

详细说明

Manufacturer: Vishay

Description: MOSFET, DUAL, N, SC-70

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Specifications:

  • Base Number: 1958
  • Continuous Drain Current Id: 1.3 A
  • Current Id Max: 1.3 A
  • Drain Source Voltage Vds: 20 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • N-channel Gate Charge: 1.2nC
  • Number of Pins: 6
  • On Resistance Rds(on): 205 MOhm
  • On State Resistance @ Vgs = 2.5V: 340 MOhm
  • On State Resistance @ Vgs = 4.5V: 205 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-323
  • Power Dissipation: 1.25 W
  • Pulse Current Idm: 4 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (20-Jun-2011)
  • Threshold Voltage Vgs Typ: 1.6 V
  • Transistor Case Style: SOT-323
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 1.6 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: 1.6 V
  • Voltage Vgs th Min: 0.6 V

RoHS: Yes

其他名称:

SI1958DHT1E3, SI1958DH T1 E3