Datasheet SI1912EDH-T1-E3 - Vishay MOSFET, NN CH, 20 V, SOT363 — 数据表

Vishay SI1912EDH-T1-E3

Part Number: SI1912EDH-T1-E3

详细说明

Manufacturer: Vishay

Description: MOSFET, NN CH, 20 V, SOT363

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Docket:
Si1912EDH
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450 at VGS = 1.8 V ID (A) 1.28 1.13 1.0

Specifications:

  • Continuous Drain Current Id: 1.28 A
  • Current Id Max: 1.28 A
  • Drain Source Voltage Vds: 20 V
  • Module Configuration: Dual
  • Number of Pins: 6
  • On Resistance Rds(on): 280 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-363
  • Power Dissipation Pd: 570 mW
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Threshold Voltage Vgs Typ: 450 mV
  • Transistor Case Style: SOT-363
  • Transistor Polarity: Dual N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 450 mV
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

其他名称:

SI1912EDHT1E3, SI1912EDH T1 E3