Datasheet PHKD6N02LT - NXP MOSFET, N, SO-8 — 数据表

NXP PHKD6N02LT

Part Number: PHKD6N02LT

详细说明

Manufacturer: NXP

Description: MOSFET, N, SO-8

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Docket:
PHKD6N02LT
Dual TrenchMOSTM logic level FET
M3D315
Rev.

02 -- 12 August 2003
Product data

Specifications:

  • Continuous Drain Current Id: 10.9 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 20 V
  • External Depth: 5.2 mm
  • External Length / Height: 1.75 mm
  • External Width: 4.05 mm
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 20 MOhm
  • Package / Case: SOIC
  • Power Dissipation Pd: 4.17 W
  • Pulse Current Idm: 44 A
  • Row Pitch: 6.3 mm
  • SMD Marking: PHKD6N02LT
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes