Datasheet FDS8926A - Fairchild TRANSISTOR, MOSFET — 数据表

Fairchild FDS8926A

Part Number: FDS8926A

详细说明

Manufacturer: Fairchild

Description: TRANSISTOR, MOSFET

Docket:
February 1998
FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

Continuous Drain Current Id: 5.5 A
Current Id Max: 5.5 A
Drain Source Voltage Vds: 30 V
Module Configuration: Dual
Mounting Type: SMD
Number of Pins: 8
On Resistance Rds(on): 30 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: SOIC
Power Dissipation Pd: 2 W
Rds(on) Test Voltage Vgs: 4.5 V
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 670 mV
Transistor Case Style: SOIC
Transistor Polarity: Dual N Channel
Voltage Vds Typ: 30 V
Voltage Vgs Max: 8 V
Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Accessories:

Roth Elektronik - RE932-01