Datasheet ZXMN6A11DN8TA - Diodes MOSFET, DUAL, N, 60 V, SO-8 — 数据表

详细说明

Manufacturer: Diodes

Description: MOSFET, DUAL, N, 60 V, SO-8

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Docket:
ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) ( ) 0.120 @ VGS= 10V 0.180 @ VGS= 4.5V ID (A) 3.2 2.6
Description
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Specifications:

• Continuous Drain Current Id: 3.2 A
• Current Id Max: 3.2 A
• Drain Source Voltage Vds: 60 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 180 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Pin Configuration: 1(S1), 2(G1), 3(S2), 4(G2), 5+6(D2), 7+8(D1)
• Power Dissipation Pd: 2.1 W
• Pulse Current Idm: 13.7 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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