Datasheet US6M1TR - Rohm MOSFET, DUAL, NP, 2.5V/4V, TUMT6 — 数据表

Rohm US6M1TR

Part Number: US6M1TR

详细说明

Manufacturer: Rohm

Description: MOSFET, DUAL, NP, 2.5V/4V, TUMT6

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Docket:
US6M1
Transistors
4V Drive Nch+Nch MOS FET
US6M1
Structure Silicon N-channel / P-channel MOS FET External dimensions (Unit : mm)

Specifications:

  • Capacitance Ciss Typ: 70 pF
  • Continuous Drain Current Id: 1 A
  • Current Id Max: 1.4 A
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 8 ns
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • On Resistance Rds(on): 380 MOhm
  • Package / Case: TUMT6
  • Power Dissipation: 1 W
  • Pulse Current Idm: 4 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 6 ns
  • SVHC: No SVHC (20-Jun-2011)
  • Threshold Voltage Vgs Typ: 2.5 V
  • Transistor Case Style: TUMT
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Rds on Measurement: 4 V
  • Voltage Vgs th Max: 2.5 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes