Datasheet PMGD8000LN - NXP MOSFET, DUAL, NN, SOT-363 — 数据表

NXP PMGD8000LN

Part Number: PMGD8000LN

详细说明

Manufacturer: NXP

Description: MOSFET, DUAL, NN, SOT-363

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Docket:
PMGD8000LN
Dual µTrenchMOSTM logic level FET
MBD128
Rev.

01 -- 27 February 2003
Product data

Specifications:

  • Continuous Drain Current Id: 125 mA
  • Current Id Max: 125 mA
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 7 ns
  • Full Power Rating Temperature: 25°C
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • Number of Transistors: 2
  • On Resistance Rds(on): 8 Ohm
  • On State Resistance Max: 8 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-363
  • Power Dissipation Pd: 200 mW
  • Pulse Current Idm: 250 mA
  • Rds(on) Test Voltage Vgs: 4 V
  • Rise Time: 7 ns
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: SOT-363
  • Transistor Polarity: N Channel
  • Turn Off Time: 15 ns
  • Turn On Time: 10 ns
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Rds on Measurement: 4 V
  • Voltage Vgs th Max: 1.5 V

RoHS: Yes