Datasheet PMGD780SN,115 - NXP MOSFET, N CH, TRENCH DL, 60 V, SOT363 — 数据表

NXP PMGD780SN,115

Part Number: PMGD780SN,115

详细说明

Manufacturer: NXP

Description: MOSFET, N CH, TRENCH DL, 60 V, SOT363

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Docket:
PMGD780SN
Dual N-channel TrenchMOS standard level FET
Rev.

02 -- 19 April 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

  • Continuous Drain Current Id, N Channel: 490 mA
  • Continuous Drain Current Id: 300 mA
  • Current Id Max: 490 mA
  • Drain Source Voltage Vds, N Channel: 60 V
  • Drain Source Voltage Vds: 60 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • On Resistance Rds(on), N Channel: 0.78 Ohm
  • On Resistance Rds(on): 920 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-363
  • Power Dissipation: 410 mW
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Case Style: SOT-363
  • Transistor Polarity: Dual N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 60 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

其他名称:

PMGD780SN115, PMGD780SN 115