Datasheet PHN210T,118 - NXP MOSFET N-CH 30 V 3.4 A 8-SOIC — 数据表

NXP PHN210T,118

Part Number: PHN210T,118

详细说明

Manufacturer: NXP

Description: MOSFET N-CH 30 V 3.4 A 8-SOIC

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Docket:
PHN210T
Dual N-channel TrenchMOS intermediate level FET
Rev.

02 -- 15 December 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

  • Continuous Drain Current Id: 2.2 A
  • Current Id Max: 2.4 A
  • Drain Source Voltage Vds: 30 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • On Resistance Rds(on): 100 MOhm
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOIC
  • Power Dissipation Pd: 2 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: Dual N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

其他名称:

PHN210T118, PHN210T 118