Datasheet FDC6320C - Fairchild MOSFET, NP — 数据表

Fairchild FDC6320C

Part Number: FDC6320C

详细说明

Manufacturer: Fairchild

Description: MOSFET, NP

data sheetDownload Data Sheet

Docket:
October 1997
FDC6320C Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
Features

Specifications:

  • Cont Current Id N Channel: 0.22 A
  • Cont Current Id P Channel: 120 mA
  • Continuous Drain Current Id: 220 mA
  • Current Id Max: 220 mA
  • Drain Source Voltage Vds: 25 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • On Resistance Rds(on): 5 Ohm
  • On State Resistance N Channel Max: 4 Ohm
  • On State Resistance P Channel Max: 10 Ohm
  • Package / Case: SuperSOT-6
  • Power Dissipation: 900 mW
  • Rds(on) Test Voltage Vgs: 2.7 V
  • SVHC: No SVHC (20-Jun-2011)
  • Transistor Case Style: SuperSOT
  • Transistor Polarity: N and P Channel
  • Voltage Vds Typ: 25 V
  • Voltage Vgs Max: 850 mV
  • Voltage Vgs Rds N Channel: 4.5 V
  • Voltage Vgs Rds P Channel: 4.5 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th N Channel 1 Min: 0.65 V
  • Voltage Vgs th P Channel Max: -1.5 V
  • Voltage Vgs th P Channel Min: -0.65 V

RoHS: Yes