Datasheet SI4800BDY - Vishay MOSFET, N, SO-8 — 数据表

Vishay SI4800BDY

Part Number: SI4800BDY

详细说明

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4800BDY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)

Specifications:

  • Continuous Drain Current Id: 6.5 A
  • Current Id Max: 6.5 A
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 1
  • On Resistance Rds(on): 18.5 MOhm
  • On State Resistance @ Vgs = 4.5V: 30 MOhm
  • On State resistance @ Vgs = 10V: 18.5 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • P Channel Gate Charge: 8.7nC
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.3 W
  • Pulse Current Idm: 40 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 1.8 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 25 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Dow Corning - 2265931
  • Fischer Elektronik - ICK SMD A 5 SA
  • Fischer Elektronik - WLK 5