Datasheet SIE822DF-T1-E3 - Vishay MOSFET, N, POLAR PAK — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N, POLAR PAK

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Docket:
SiE822DF
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
ID (A)a VDS (V) 20 RDS(on) () 0.0034 at VGS = 10 V 0.0055 at VGS = 4.5 V Silicon Limit 138 108 Package Qg (Typ.) Limit 50 24 nC 50

Specifications:

• Base Number: 822
• Continuous Drain Current Id: 138 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• N-channel Gate Charge: 24nC
• On Resistance Rds(on): 3.4 MOhm
• On State Resistance @ Vgs = 4.5V: 5.5 MOhm
• On State resistance @ Vgs = 10V: 3.4 MOhm
• Package / Case: PolarPAK
• Power Dissipation Pd: 104 W
• Pulse Current Idm: 80 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2.3 V
• Transistor Case Style: PolarPAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1.5 V

RoHS: Y-Ex

其他名称:

SIE822DFT1E3, SIE822DF T1 E3