Datasheet SIE812DF-T1-E3 - Vishay MOSFET, N, POLAR PAK — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N, POLAR PAK

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Docket:
SiE812DF
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
ID (A)a VDS (V) 40 RDS(on) ()e 0.0026 at VGS = 10 V 0.0034 at VGS = 4.5 V Silicon Limit 163 143 Package Qg (Typ.) Limit 60 52 nC 60

Specifications:

• Base Number: 812
• Continuous Drain Current Id: 163 A
• Drain Source Voltage Vds: 40 V
• Mounting Type: SMD
• N-channel Gate Charge: 52nC
• On Resistance Rds(on): 2.6 MOhm
• On State Resistance @ Vgs = 4.5V: 3.4 MOhm
• On State resistance @ Vgs = 10V: 2.6 MOhm
• Operating Temperature Range: -50°C to +150°C
• Package / Case: PolarPAK
• Power Dissipation Pd: 125 W
• Pulse Current Idm: 100 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2.3 V
• Transistor Case Style: PolarPAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 40 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1.5 V

RoHS: Yes

其他名称:

SIE812DFT1E3, SIE812DF T1 E3