Datasheet SIR890DP-T1-GE3 - Vishay MOSFET, N, SO-8 — 数据表

Vishay SIR890DP-T1-GE3

Part Number: SIR890DP-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, N, SO-8

data sheetDownload Data Sheet

Docket:
New Product
SiR890DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 50 A
  • Current Id Max: 50 A
  • Drain Source Voltage Vds: 20 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • On State Resistance: 2.9 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: PowerPAK
  • Power Dissipation Pd: 50 W
  • Rds(on) Test Voltage Vgs: 20 V
  • Rise Time: 10 ns
  • Threshold Voltage Vgs Typ: 2.6 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 2.6 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2.6 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

其他名称:

SIR890DPT1GE3, SIR890DP T1 GE3