Datasheet SIHP12N50C-E3 - Vishay MOSFET, N CH, DIODE, 500 V, 12 A, TO-220AB — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 500 V, 12 A, TO-220AB

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Docket:
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.

RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

Specifications:

• Current Id Max: 12 A
• Drain Source Voltage Vds: 500 V
• Number of Pins: 3
• On State Resistance: 0.46 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 208 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-220AB
• Transistor Polarity: N Channel
• Voltage Vgs Max: 30 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• MULTICORE (SOLDER) - 1399075-M

其他名称:

SIHP12N50CE3, SIHP12N50C E3