Datasheet SIB410DK-T1-GE3 - Vishay MOSFET, N CH, DIODE, 30 V, 9 A, SC75 PPAK — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 30 V, 9 A, SC75 PPAK

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Docket:
New Product
SiB410DK
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 5.9 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 6
• On State Resistance: 0.034 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.5 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Transistor Case Style: PowerPAK SC75
• Transistor Polarity: N Channel
• Voltage Vgs Max: 8 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Electrolube - SMA10SL

其他名称:

SIB410DKT1GE3, SIB410DK T1 GE3