Datasheet SIA444DJT-T1-GE3 - Vishay MOSFET, N CH, DIODE, 30 V, 12 A, SC70 PPAK — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 30 V, 12 A, SC70 PPAK

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Docket:
New Product
SiA444DJT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY

Specifications:

• Current Id Max: 11 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 6
• On State Resistance: 0.014 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 3.5 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PowerPAK SC70
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fairchild - FDS6900AS
• Fischer Elektronik - FK 244 13 D2 PAK

其他名称:

SIA444DJTT1GE3, SIA444DJT T1 GE3