Datasheet SI4896DY-T1-E3 - Vishay MOSFET, P, SO-8 — 数据表
Part Number: SI4896DY-T1-E3
详细说明
Manufacturer: Vishay
Description: MOSFET, P, SO-8
Docket:
Si4896DY
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 80 RDS(on) () 0.0165 at VGS = 10 V 0.022 at VGS = 6.0 V ID (A) 9.5 8.3
Specifications:
- Continuous Drain Current Id: 9.5 A
- Current Id Max: 9.5 A
- Drain Source Voltage Vds: 80 V
- Number of Pins: 8
- On State Resistance: 16.5 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOIC-8
- Power Dissipation Pd: 1.56 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vds Typ: 80 V
- Voltage Vgs Max: 2 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Roth Elektronik - RE932-01
其他名称:
SI4896DYT1E3, SI4896DY T1 E3