Datasheet SI2302CDS-T1-GE3 - Vishay MOSFET, N, SOT-23 — 数据表

Vishay SI2302CDS-T1-GE3

Part Number: SI2302CDS-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, N, SOT-23

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Docket:
Si2302CDS
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.057 at VGS = 4.5 V 0.075 at VGS = 2.5 V ID (A) 2.9 2.6 Qg (Typ.) 3.5

Specifications:

  • Continuous Drain Current Id: 2.9 A
  • Current Id Max: 2.9 A
  • Drain Source Voltage Vds: 20 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 57 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation: 710 mW
  • Rds(on) Test Voltage Vgs: 8 V
  • Rise Time: 7 ns
  • SVHC: No SVHC (20-Jun-2011)
  • Threshold Voltage Vgs Typ: 850 mV
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 850 mV
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: 0.85 V
  • Voltage Vgs th Min: 0.4 V

RoHS: Yes

其他名称:

SI2302CDST1GE3, SI2302CDS T1 GE3