Datasheet SI3441BDV-T1-E3 - Vishay MOSFET, P, TSOP-6 — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, P, TSOP-6

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Docket:
Si3441BDV
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)

Specifications:

• Charge Qrr @ Tj = 25В°C Typ: 5.2nC
• Continuous Drain Current Id: 2.45 A
• Current Id Max: -2.45 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• External Depth: 2.85 mm
• External Length / Height: 1.45 mm
• External Width: 3 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 6
• Number of Transistors: 1
• On State Resistance @ Vgs = 2.5V: 130 MOhm
• On State Resistance @ Vgs = 4.5V: 90 MOhm
• On State Resistance: 90 MOhm
• Package / Case: TSOP
• Power Dissipation Pd: 860 mW
• Pulse Current Idm: 16 A
• Rds(on) Test Voltage Vgs: -4.5 V
• Reverse Recovery Time trr Typ: 50 ns
• SMD Marking: B1xxx
• Threshold Voltage Vgs Typ: -850 mV
• Transistor Case Style: TSOP
• Transistor Polarity: P Channel
• Voltage Vds Typ: -20 V
• Voltage Vds: 20 V
• Voltage Vgs Max: -850 mV
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Min: -0.45 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Panasonic - EYGA121807A

其他名称:

SI3441BDVT1E3, SI3441BDV T1 E3