Datasheet SI2305DS-T1-E3 - Vishay MOSFET, P, TO-236 — 数据表

Vishay SI2305DS-T1-E3

Part Number: SI2305DS-T1-E3

详细说明

Manufacturer: Vishay

Description: MOSFET, P, TO-236

data sheetDownload Data Sheet

Docket:
Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8 RDS(on) () 0.052 at VGS = - 4.5 V 0.071 at VGS = - 2.5 V 0.108 at VGS = - 1.8 V ID (A) ± 3.5 ±3 ±2

Specifications:

  • Continuous Drain Current Id: -3.5 A
  • Current Id Max: 3.5 A
  • Drain Source Voltage Vds: -8 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 52 MOhm
  • Package / Case: TO-236
  • Power Dissipation: 1.25 W
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Threshold Voltage Vgs Typ: -800 mV
  • Transistor Case Style: TO-236
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -8 V
  • Voltage Vgs Max: -800 mV
  • Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

其他名称:

SI2305DST1E3, SI2305DS T1 E3