Datasheet IRFBE30SPBF - Vishay MOSFET, N, 800 V, 4.1 A, D2-PAK — 数据表

Vishay IRFBE30SPBF

Part Number: IRFBE30SPBF

详细说明

Manufacturer: Vishay

Description: MOSFET, N, 800 V, 4.1 A, D2-PAK

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Docket:
PD - 94694
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
G
HEXFET® Power MOSFET
D

Specifications:

  • Alternate Case Style: D2-PAK
  • Continuous Drain Current Id: 4.1 A
  • Drain Source Voltage Vds: 600 V
  • Junction to Case Thermal Resistance A: 1 °C/W
  • Mounting Type: SMD
  • On State Resistance: 1.2 Ohm
  • On State resistance @ Vgs = 10V: 1.2 Ohm
  • Package / Case: D2-PAK
  • Power Dissipation Pd: 130 W
  • Pulse Current Idm: 16 A
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: D2-PAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 800 V
  • Voltage Vds: 600 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4 V

RoHS: Y-Ex

Accessories:

  • Fischer Elektronik - FK 244 08 D2 PAK
  • Fischer Elektronik - FK 244 13 D2 PAK
  • Fischer Elektronik - WLK 5