Datasheet TK60D08J1(Q) - Toshiba MOSFET, N CH, 75 V, 60 A, SC-67 — 数据表

Toshiba TK60D08J1(Q)

Part Number: TK60D08J1(Q)

详细说明

Manufacturer: Toshiba

Description: MOSFET, N CH, 75 V, 60 A, SC-67

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Docket:
TK60D08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS)
TK60D08J1
Switching Regulator Application
· · · · · · High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 75 V) Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

  • Current Id Max: 60 A
  • Drain Source Voltage Vds: 75 V
  • Number of Pins: 3
  • On State Resistance: 6.2 MOhm
  • Power Dissipation Pd: 140 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SC-67
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Y-Ex

Accessories:

  • AAVID THERMALLOY - 220SA
  • AAVID THERMALLOY - BW50-2G
  • ABL HEATSINKS - 205AB0500B
  • GC ELECTRONICS - 10-8108