Datasheet SI7450DP-T1-GE3 - Vishay MOSFET, N CH, 200V.3.2A, PPSO8 — 数据表

Vishay SI7450DP-T1-GE3

Part Number: SI7450DP-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, 200V.3.2A, PPSO8

data sheetDownload Data Sheet

Docket:
Si7450DP
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 200 RDS(on) () 0.080 at VGS = 10 V 0.090 at VGS = 6 V ID (A) 5.3 5.0

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 3.2 A
  • Current Id Max: 3.2 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 200 V
  • External Depth: 5.26 mm
  • External Length / Height: 1.2 mm
  • External Width: 6.2 mm
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Junction to Case Thermal Resistance A: 1.8 °C/W
  • Mounting Type: SMD
  • N-channel Gate Charge: 42nC
  • Number of Pins: 8
  • On State Resistance Max: 80 MOhm
  • On State Resistance: 5 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: PowerPAK SO
  • Power Dissipation Pd: 1.9 W
  • Pulse Current Idm: 40 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 4.5 V
  • Transistor Case Style: PowerPAK SO
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 200 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Min: 2 V

RoHS: Yes

Accessories:

  • LICEFA - V11-7-6-10
  • LICEFA - V11-7
  • Roth Elektronik - RE932-01

其他名称:

SI7450DPT1GE3, SI7450DP T1 GE3