Datasheet SI4532CDY-T1-GE3 - Vishay MOSFET, NP-CH, 30 V, SO8 — 数据表

Vishay SI4532CDY-T1-GE3

Part Number: SI4532CDY-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, NP-CH, 30 V, SO8

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Docket:
Si4532CDY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 30 RDS(on) () 0.047 at VGS = 10 V 0.065 at VGS = 4.5 V 0.089 at VGS = - 10 V 0.140 at VGS = - 4.5 V ID (A)a 6.0 5.2 - 4.3 - 3.4 Qg (Typ.) 2.75

Specifications:

  • Current Id Max: 6 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 8
  • On State Resistance: 38 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 2.78 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N and P Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

其他名称:

SI4532CDYT1GE3, SI4532CDY T1 GE3